Double Heterostructure Gao.47In0.53As MESFETs with Submicron Gates

Joseph Barnard, Hideo Ohno, Colin E.C. Wood, Lester F. Eastman

研究成果: Article査読

29 被引用数 (Scopus)

抄録

MESFETs with GAo.47Ino.53As active channel grown by MBE on InP substrates were successfully fabricated. Thin layers of MBE grown Al0.48In0.52As separated both the single crystal aluminum gate from the active channel and the active channel from the InP substrate so raising the Schottky barrier height of the gate and confining the electrons to the channel. The MESFETs with 0.6pm long gates and gate-to-source separations of 0.8 um exhibited an average gm of 135 mS mm-1 of gate width for Vds = 2V and Vg = 0. This is higher than that reported for GaAs MESFETs with a similar geometry in spite of the intermediate layer beteen the gate metal and the active layer.

本文言語English
ページ(範囲)174-176
ページ数3
ジャーナルIEEE Electron Device Letters
1
9
DOI
出版ステータスPublished - 1980 9月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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