Doping Dependence of an [Formula presented]-Type Cuprate Superconductor Investigated by Angle-Resolved Photoemission Spectroscopy

N. P. Armitage, F. Ronning, D. H. Lu, C. Kim, A. Damascelli, K. M. Shen, D. L. Feng, H. Eisaki, Z. X. Shen, P. K. Mang, N. Kaneko, M. Greven, Y. Onose, Y. Taguchi, Y. Tokura

研究成果: Article査読

7 被引用数 (Scopus)

抄録

We present an angle-resolved photoemission doping dependence study of the [Formula presented]-type cuprate superconductor [Formula presented], from the half-filled Mott insulator to the [Formula presented] superconductor. In [Formula presented], we reveal the charge-transfer band for the first time. As electrons are doped into the system, this feature’s intensity decreases with the concomitant formation of near- [Formula presented] spectral weight. At low doping, the Fermi surface is an electron-pocket (with volume [Formula presented]) centered at [Formula presented]. Further doping leads to the creation of a new holelike Fermi surface (volume [Formula presented]) centered at [Formula presented]. These findings shed light on the Mott gap, its doping evolution, as well as the anomalous transport properties of the [Formula presented]-type cuprates.

本文言語English
ページ(範囲)4
ページ数1
ジャーナルPhysical review letters
88
25
DOI
出版ステータスPublished - 2002
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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