Doping and electrical characteristics of in situ heavily B-doped Si1-xGex films epitaxially grown using ultraclean LPCVD

Atsushi Moriya, Masao Sakuraba, Takashi Matsuura, Junichi Murota

研究成果: Article査読

16 被引用数 (Scopus)

抄録

Doping and electrical characteristics of in situ heavily B-doped Si1-xGex (0.15 < x < 0.80) films epitaxially grown on Si(100) were investigated. The epitaxial growth was carried out at 550°C in a SiH4-GeH4-B2H6-H2 gas mixture by using an ultraclean hot-wall low pressure chemical vapor deposition (LPCVD) system. With increasing B2H6 partial pressure, the deposition rate decreased only at the higher GeH4 partial pressure, and the B concentration (CB) in the film increased proportionally up to 1022 cm-3. The Ge fraction scarcely changed with the B2H6 addition. The carrier concentration was nearly equal to CB up to about 2 × 1020 cm-3, and it tended to be saturated at around 5 × 1020 cm-3 at CB <∼ 1022 cm-3. In other words, electrically inactive B increased with increasing CB above 2 × 1020 cm-3. The resistivity decreased with increasing carrier concentration at CB <∼ 1022 cm-3 and was influenced by alloy scattering. Discrepancy of the lattice constants from Vegard's law was observed at higher CB in the order of 1020 cm-3 and above, which corresponded with the saturation of the carrier concentration.

本文言語English
ページ(範囲)541-544
ページ数4
ジャーナルThin Solid Films
343-344
1-2
DOI
出版ステータスPublished - 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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