Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants

Nobuhiko Mitoma, Shinya Aikawa, Wei Ou-Yang, Xu Gao, Takio Kizu, Meng Fang Lin, Akihiko Fujiwara, Toshihide Nabatame, Kazuhito Tsukagoshi

研究成果: Article査読

35 被引用数 (Scopus)

抄録

The dependence of oxygen vacancy suppression on dopant species in amorphous indium oxide (a-InOx) thin film transistors (TFTs) is reported. In a-InOx TFTs incorporating equivalent atom densities of Si- and W-dopants, absorption of oxygen in the host a-InOx matrix was found to depend on difference of Gibbs free energy of the dopants for oxidation. For fully oxidized films, the extracted channel conductivity was higher in the a-InOx TFTs containing dopants of small ionic radius. This can be explained by a reduction in the ionic scattering cross sectional area caused by charge screening effects.

本文言語English
論文番号042106
ジャーナルApplied Physics Letters
106
4
DOI
出版ステータスPublished - 2015 1 26
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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