Dopant Redistribution During Gate Oxidation Including Transient Enhanced Diffusion in Oxidizing Ambient

Tetsuya Uchida, Katsumi Eikyu, Masato Fujinaga, Akinobu Teramoto, Hirokazu Miyoshi

研究成果: Conference article査読

3 被引用数 (Scopus)

抄録

Dopant redistributionduring gate oxidation is investigated, where the enhancement of the diffusion due to implantation damage and that due to okidationoccur simultaneously. Dopant profiles after the gate oxidation are measured for various oxidation times, and they are compared to the profiles after the N2-annealings. From the results, it is concludedthat, for typical gate oxidation conditions (oxide thickness less than 100Å), the enhancement due to oxidation is small, and the dopant redistribution is initially dominated by the damage-enhanced diffusion.

本文言語English
ページ(範囲)795-798
ページ数4
ジャーナルTechnical Digest - International Electron Devices Meeting, IEDM
DOI
出版ステータスPublished - 1996
外部発表はい
イベントProceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA
継続期間: 1996 12月 81996 12月 11

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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