Dopant redistributionduring gate oxidation is investigated, where the enhancement of the diffusion due to implantation damage and that due to okidationoccur simultaneously. Dopant profiles after the gate oxidation are measured for various oxidation times, and they are compared to the profiles after the N2-annealings. From the results, it is concludedthat, for typical gate oxidation conditions (oxide thickness less than 100Å), the enhancement due to oxidation is small, and the dopant redistribution is initially dominated by the damage-enhanced diffusion.
|ジャーナル||Technical Digest - International Electron Devices Meeting, IEDM|
|出版ステータス||Published - 1996|
|イベント||Proceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA|
継続期間: 1996 12月 8 → 1996 12月 11
ASJC Scopus subject areas