Dopant-pair structures segregated on a hydrogen-terminated Si(100) surface

Yuji Suwa, S. Matsuura, M. Fujimori, S. Heike, T. Onogi, H. Kajiyama, T. Hitosugi, K. Kitazawa, T. Uda, T. Hashizume

研究成果: Article査読

11 被引用数 (Scopus)

抄録

An unfamiliar and novel structure observed on a H-terminated Si(100)-(2x1) surface was reported. It was found that the surface density of the structure was proportional to the substrates dopant density. On the basis of STM results and theoretical calculation, the structure was observed to be a dopant-pair structure segregated from the bulk material and incorporated in the top layer of the Si surface.

本文言語English
論文番号156101
ページ(範囲)156101/1-156101/4
ジャーナルPhysical review letters
90
15
出版ステータスPublished - 2003 4月 18
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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