Dopant characterization in self-regulatory plasma doped fin field-effect transistors by atom probe tomography

H. Takamizawa, Y. Shimizu, Y. Nozawa, T. Toyama, H. Morita, Y. Yabuuchi, M. Ogura, Y. Nagai

研究成果: Article査読

18 被引用数 (Scopus)

抄録

Fin field-effect transistors are promising next-generation electronic devices, and the identification of dopant positions is important for their accurate characterization. We report atom probe tomography (APT) of silicon fin structures prepared by a recently developed self-regulatory plasma doping (SRPD) technique. Trenches between fin-arrays were filled using a low-energy focused ion beam to directly deposit silicon, which allowed the analysis of dopant distribution by APT near the surface of an actual fin transistor exposed to air. We directly demonstrate that SRPD can achieve a boron concentration above 1 10 20 atoms/cm 3 at the fin sidewall.

本文言語English
論文番号093502
ジャーナルApplied Physics Letters
100
9
DOI
出版ステータスPublished - 2012 2 27

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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