Donor-acceptor pair luminescence in nitrogen-doped ZnO films grown on lattice-matched ScAlMgO4 (0001) substrates

K. Tamura, T. Makino, A. Tsukazaki, M. Sumiya, S. Fuke, T. Furumochi, M. Lippmaa, C. H. Chia, Y. Segawa, H. Koinuma, M. Kawasaki

研究成果: Article査読

100 被引用数 (Scopus)

抄録

We have grown nitrogen-doped ZnO (ZnO:N) films by laser molecular-beam epitaxy. The use of lattice-matched ScAlMgO4 substrates prevented the degradation of crystallinity induced by the nitrogen incorporation to the films. Despite this improvement, we have not obtained ZnO:N films which showed p-type conductivity. We studied the optical properties of these ZnO:N films. Donor-acceptor pair (DAP) luminescence was observed. The results indicate the formation of an acceptor state. The energy position of the DAP luminescence is lower than that reported by Look et al. [Appl. Phys. Lett. 81 (2002) 1830]. The DAP luminescence band shifts to lower energy with increasing nitrogen concentration. A photoluminescence recombination possibly due to the free-electron-to-acceptor (FA) transition was observed at temperatures higher than 40 K. The acceptor ionization energy was estimated from the energy position of the FA luminescence to be 266 meV.

本文言語English
ページ(範囲)265-269
ページ数5
ジャーナルSolid State Communications
127
4
DOI
出版ステータスPublished - 2003 7月 1

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 材料化学

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