Dominated energy dissipation in ultrathin single crystal silicon cantilever: Surface loss

Jinling Yang, Takahito Ono, Masayoshi Esashi

研究成果: Paper査読

10 被引用数 (Scopus)

抄録

The effect of surface treatment in UHV chamber on Q factor of cantilevers with different thickness (60 nm, 170 nm and 500 nm) and different surface orientation was investigated. When length L>30 μm, Q factor is proportional to thickness, surface loss dominates. While L<30 μm, support loss surpasses the surface loss. Heating can remove SiO2 layer and absorbates, and result in an increase of Q factor. Hydrogen termination leads to a larger relative increase of Q factor in thinner structure than in thicker ones. Heating and H exposure improve Q values of Si(100) oriented cantilevers more than Si(110) oriented ones and result in the contrary resonance frequency response for these two surfaces.

本文言語English
ページ235-240
ページ数6
出版ステータスPublished - 2000
イベント13th Annual International Conference on Micro Electro Mechanical Systems (MEMS 2000) - Miyazaki, Jpn
継続期間: 2000 1月 232000 1月 27

Other

Other13th Annual International Conference on Micro Electro Mechanical Systems (MEMS 2000)
CityMiyazaki, Jpn
Period00/1/2300/1/27

ASJC Scopus subject areas

  • 制御およびシステム工学
  • 機械工学
  • 電子工学および電気工学

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