Domain-wall resistance in ferromagnetic (Ga,Mn)As

D. Chiba, M. Yamanouchi, F. Matsukura, T. Dietl, H. Ohno

研究成果: Article査読

62 被引用数 (Scopus)

抄録

A series of microstructures designed to pin domain walls (DWs) in (Ga,Mn)As with perpendicular magnetic anisotropy has been employed to determine extrinsic and intrinsic contributions to DW resistance. The former is explained quantitatively as resulting from a polarity change in the Hall electric field at DW. The latter is 1 order of magnitude greater than a term brought about by anisotropic magnetoresistance and is shown to be consistent with disorder-induced mistracking of the carrier spins subject to spatially varying magnetization.

本文言語English
論文番号096602
ジャーナルPhysical review letters
96
9
DOI
出版ステータスPublished - 2006

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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