Distinguishing persistent effects in an undoped GaAs/AlGaAs quantum well by top-gate-dependent illumination

Takafumi Fujita, Ryota Hayashi, Makoto Kohda, Julian Ritzmann, Arne Ludwig, Junsaku Nitta, Andreas D. Wieck, Akira Oiwa

研究成果: Article査読

抄録

Persistent photoconductivity of GaAs/AlGaAs heterostructures has hampered the measurement of charge- and spin-related quantum effects in gate-defined quantum devices and integrated charge sensors due to Si-dopant-related deep donor levels (DX centers). In this study, this effect is overcome by using an undoped GaAs/AlGaAs heterostructure for photonic purposes. We also measure the electron transport before and after LED illumination at low temperatures. In addition to a regular rapid saturation showing the increased carrier density, a slow accumulation of illumination effects appeared when different top-gate voltages were applied during illumination, which indicated the redistribution of charge at the oxide-GaAs interface. This study provides interesting insights into the development of optically stable devices for efficient semiconductor quantum interfaces.

本文言語English
論文番号234301
ジャーナルJournal of Applied Physics
129
23
DOI
出版ステータスPublished - 2021 6 21

ASJC Scopus subject areas

  • 物理学および天文学(全般)

フィンガープリント

「Distinguishing persistent effects in an undoped GaAs/AlGaAs quantum well by top-gate-dependent illumination」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル