DISORDER INDUCED GAP STATE MODEL FOR ANOMALOUS C-V CARRIER CONCENTRATION PROFILES AT EPITAXIALLY GROWN INTERFACES.

Hideki Hasegawa, Eiji Ikeda, Hideo Ohno

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

Anomalous depletion/accumulation (D/A) carrier concentration profiles were observed at GaAs/GaAs and InGaAs/GaAs MOVPE regrown interfaces prepared under various growth and processing conditions. Based on a C-V and DLTS study, a disorder induced gap state (DIGS) continuum due to interface crystalline disorder rather than specific discrete deep levels is proposed to be responsible for the anomalous D/A profile and Fermi level pinning.

本文言語English
ホスト出版物のタイトルConference on Solid State Devices and Materials
出版社Business Cent for Academic Soc Japan
ページ145-148
ページ数4
ISBN(印刷版)493081314X, 9784930813145
DOI
出版ステータスPublished - 1986
外部発表はい

出版物シリーズ

名前Conference on Solid State Devices and Materials

ASJC Scopus subject areas

  • 工学(全般)

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