Dislocations of ZnO single crystals examined by X-ray topography and photoluminescence

K. Yoshino, M. Yoneta, I. Yonenaga

研究成果: Article査読

8 被引用数 (Scopus)

抄録

Dislocations generated by indentation and subsequent annealing at elevated temperatures up to 800 °C in high quality (0001) wafers of ZnO single crystals were investigated by transmission X-ray topography and photoluminescence. Damages induced by indentation in ZnO wafers were guessed to lead to dislocated regions from X-ray topographic images. PL intensities of 3.36 eV near-band edge peak and 2.4 eV deep emission band in ZnO decreased drastically, with increasing in annealing temperature up to 800 °C, irrespective of dislocated or non-dislocated regions. The development of a new emission band 2.8-3.0 eV was found in non-damaged ZnO through annealing at 700 and 800 °C, which suggests that dislocations suppress the development of the new peak.

本文言語English
ページ(範囲)199-201
ページ数3
ジャーナルJournal of Materials Science: Materials in Electronics
19
2
DOI
出版ステータスPublished - 2008 2

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学
  • 電子工学および電気工学

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