Dislocation-induced deep levels in ELO InP revealed by point contact photocapacitance measurements

30K-photocapacitance and excitation photocapacitance methods were applied to reveal the dislocation-induced deep levels in coalescent epitaxial lateral overgrowth layers of InP. Point-contact Schottky barrier junctions with small junction areas were formed on dislocated and dislocation-free regions. In the dislocation-free layers, the dominant deep level was located at E _c-1.30 eV, whereas in the dislocated area, dominant deep levels were detected at E_c-0.86 eV and 1.05 eV. A neutralized state was also detected at 0.66 eV+E_v. Excitation photocapacitance results have shown that the defect configuration coordinate diagram of the dislocation-induced deep levels was considered with large Frank-Condon shifts of 0.28 eV.