Dislocation-Impurity Interaction in Silicon

Ichiro Yonenaga

研究成果: Conference article査読

12 被引用数 (Scopus)

抄録

The dynamic interaction between dislocations and impurities B, P and Ge in Si with concentrations up to 2.5 × 1020 cm-3 is investigated by the etch-pit technique, in comparison with that O impurity. Dislocation generation from a surface scratch is strongly suppressed when the concentration of B and P impurities exceeds 1 × 1019 cm -3, originating from the immobilization by preferential impurity segregation. Dislocation velocity in motion enhances on increasing the concentration in B and P impurities. Neutral impurity Ge has weak effect on dislocation generation and velocity enhancement. Co-doping of Ge and B impurities is effective at immobilizing and retarding the velocity of dislocations in Si.

本文言語English
ページ(範囲)423-432
ページ数10
ジャーナルSolid State Phenomena
95-96
出版ステータスPublished - 2004 1月 1
イベントGettering and Defect Engineering in Semiconductor Technology GADEST 2003: Proceedings of the 10th International Autumn Meeting - Brandenburg, Germany
継続期間: 2003 9月 212003 9月 26

ASJC Scopus subject areas

  • 原子分子物理学および光学
  • 材料科学(全般)
  • 凝縮系物理学

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