抄録
The dynamic interaction between dislocations and impurities B, P and Ge in Si with concentrations up to 2.5×1020cm-3 is investigated by the etch-pit technique, in comparison with that of O impurity in Si. Dislocation generation from a surface scratch is strongly suppressed when the concentration of B and P impurities exceeds 1×10 19cm-3, originating from the immobilization by preferential impurity segregation. Dislocation velocity in motion enhances on increasing the concentration in B and P impurities. Neutral impurity Ge has weak effect on dislocation generation and velocity enhancement.
本文言語 | English |
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ページ(範囲) | 355-358 |
ページ数 | 4 |
ジャーナル | Materials Science in Semiconductor Processing |
巻 | 6 |
号 | 5-6 |
DOI | |
出版ステータス | Published - 2003 10月 1 |
ASJC Scopus subject areas
- 材料科学(全般)
- 凝縮系物理学
- 材料力学
- 機械工学