Dislocation-impurity interaction in Si

Ichiro Yonenaga

研究成果: Article査読

8 被引用数 (Scopus)

抄録

The dynamic interaction between dislocations and impurities B, P and Ge in Si with concentrations up to 2.5×1020cm-3 is investigated by the etch-pit technique, in comparison with that of O impurity in Si. Dislocation generation from a surface scratch is strongly suppressed when the concentration of B and P impurities exceeds 1×10 19cm-3, originating from the immobilization by preferential impurity segregation. Dislocation velocity in motion enhances on increasing the concentration in B and P impurities. Neutral impurity Ge has weak effect on dislocation generation and velocity enhancement.

本文言語English
ページ(範囲)355-358
ページ数4
ジャーナルMaterials Science in Semiconductor Processing
6
5-6
DOI
出版ステータスPublished - 2003 10 1

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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