Dislocation-free Czochralski Si crystal growth without Dash necking using a heavily B and Ge codoped Si seed

Xinming Huang, Toshinori Taishi, Ichiro Yonenaga, Keigo Hoshikawa

研究成果: Article査読

24 被引用数 (Scopus)

抄録

Dislocation-free Czochralski Si crystals were grown from undoped Si melt without Dash necking using heavily B and Ge codoped Si seeds 15×15 mm2 in cross-section. The concentration of B in codoped Si seeds was 2×1019 atoms/cm3 and that of Ge 8×1019 atoms/cm3. Dislocations due to thermal shock did not form in heavily B-doped seeds nor due to lattice misfit in grown crystals despite the very different B concentration in seeds and grown crystals. This indicates that B and Ge codoping adjusted the lattice constant of Si seeds to that of grown crystals.

本文言語English
ジャーナルJapanese Journal of Applied Physics
39
11 B
出版ステータスPublished - 2000 11 15

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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