Dislocation-free B-doped Si crystal growth without Dash necking in Czochralski method: Influence of B concentration

Xinming Huang, Toshinori Taishi, Ichiro Yonenaga, Keigo Hoshikawa

研究成果: Article査読

29 被引用数 (Scopus)

抄録

Dislocation-free Si crystals have been grown successfully from heavily B-doped Si melts by Czochralski (CZ) method without the Dash necking process. No dislocation was introduced in the heavily B-doped Si seed during dipping and no dislocation was generated in the grown crystal due to lattice misfit between the seed and grown crystal when the B concentration is the same in both the Si seed and grown crystal. These results show that the Dash necking process is unnecessary in heavily B-doped Si crystal growth. It is found that the limit of the B concentration in the Si seed for growing dislocation-free CZ-Si crystals without Dash necking is in the order of 1018 atoms/cm3, corresponding to a resistivity of several tens of mΩ cm.

本文言語English
ページ(範囲)283-287
ページ数5
ジャーナルJournal of Crystal Growth
213
3-4
DOI
出版ステータスPublished - 2000 6 1

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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