The dynamic behavior of dislocations in highly impurity-doped Si crystals is investigated. Suppression of the generation of dislocations from a surface scratch is found for Si doped with B and P with a concentration higher than 1 × 1019 cm-3 and the critical stress for dislocation generation increases with B and P concentration which is interpreted in terms of dislocation locking due to impurity segregation. The velocity of dislocations in B- and P-doped crystals increases with increasing B and P concentration, respectively.
|ジャーナル||Journal of Materials Science: Materials in Electronics|
|出版ステータス||Published - 2001 4|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering