Discrimination between gate-induced electrostatic and electrochemical characteristics in insulator-to-metal transition of manganite thin films

Takuro Nakamura, Azusa N. Hattori, Thi Van Anh Nguyen, Kohei Fujiwara, Hidekazu Tanaka

研究成果: Article査読

3 被引用数 (Scopus)

抄録

We propose a method of discriminating whether the gating effect is electrostatic or electrochemical on an electric double-layer transistor (EDLT), which can be a good guideline for examining the nature of EDLTs. The electrochemical effect between a channel and an ionic liquid depends on the gate voltage (VG). Our study on the dependence of the transport properties of a (La0.525Pr0.1Ca0.375)MnO3 (LPCMO) EDLT on VG revealed that the electrostatic effect is dominant below |VG| = 2 V, whereas the electrochemical effect is dominant at higher voltages. The modulation of the insulator-to-metal transition property of LPCMO was realized through the electrostatic effect.

本文言語English
論文番号073201
ジャーナルApplied Physics Express
8
7
DOI
出版ステータスPublished - 2015 7 1
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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