Direct observations of crystal growth from silicon melt

Kozo Fujiwara, Keiji Nakajima, Toru Ujihara, Noritaka Usami, Gen Sazaki, Hajime Hasegawa, Shozo Mizoguchi, Kazuo Nakajima

研究成果: Conference contribution

抄録

Crystal growth behavior from silicon melt was observed using a confocal scanning laser microscope with an infrared image furnace. The morphology of growth interface changed from planar to facet with increasing growth rate. The facet vanishing process was also observed. It was shown the (111) facet formed at a steady state. The undercooling in front of the facet interface was measured by an infrared camera and found to be almost 7 degrees. The growth behavior from silicon melt was explained by the analytical expression based on two-dimensional nucleation model.

本文言語English
ホスト出版物のタイトルProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
編集者K. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
ページ110-113
ページ数4
出版ステータスPublished - 2003 12 1
イベントProceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
継続期間: 2003 5 112003 5 18

出版物シリーズ

名前Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion
A

Other

OtherProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
CountryJapan
CityOsaka
Period03/5/1103/5/18

ASJC Scopus subject areas

  • Engineering(all)

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