Direct observation of valence and conduction states near the SiO 2/Si(100) interface

Yoshiyuki Yamashita, Susumu Yamamot, Kozo Mukai, Jun Yoshinobu, Yoshihisa Harada, Takashi Tokushima, Shik Shin

研究成果: Article査読

抄録

Valence and conduction states near the SiO2/Si(100) interface were directly observed using soft x-ray absorption and emission spectroscopy. For the O K-edge absorption spectra, the step-like structures were observed at 531, 533 and 534.5 eV. These step-like structures observed at 531, 533 and 534.5 eV were assigned to an oxygen atom bonding to Si1+ , Si 2+, and Si3+ of the interface, respectively. In the case of O K-edge emission spectra, with decreasing incident photon energy from 535 to 531 eV so as to shift the conduction band minimum of the interface towards Fermi energy, the corresponding valence band maximum was shifted to Fermi energy direction. Thus, the local band gap became narrower with the decrease of the oxidation number of the suboxide species. Further the interface structure was also discussed from the spectrum features.

本文言語English
ページ(範囲)209-212
ページ数4
ジャーナルe-Journal of Surface Science and Nanotechnology
6
DOI
出版ステータスPublished - 2008 9月 25
外部発表はい

ASJC Scopus subject areas

  • バイオテクノロジー
  • バイオエンジニアリング
  • 凝縮系物理学
  • 材料力学
  • 表面および界面
  • 表面、皮膜および薄膜

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