Direct observation of vacancy in silicon using sub-Kelvin ultrasonic measurements

Terutaka Goto, Hiroshi Yamada-Kaneta, Yasuhiro Saito, Yuichi Nemoto, Koji Sato, Koichi Kakimoto, Shintaro Nakamura

研究成果: Article査読

8 被引用数 (Scopus)


We carried out sub-Kelvin ultrasonic measurements for observation of vacancies in crystalline silicon. The longitudinal elastic constants of non-doped and B-doped floating zone (FZ) silicon crystals in commercial base revealed low-temperature elastic softening below 20 K. The applied magnetic fields turns the softening of the B-doped FZ silicon to a temperature-independent behavior, while the fields up to 16 T at base temperature 20 mK make no effect on the softening of the non-doped FZ silicon. This result means that the vacancy accompanying the non-magnetic charge state V0 in the non-doped silicon and the magnetic V+ in the B-doped silicon is responsible for the low-temperature softening through the Jahn-Teller effect. The direct observation of the vacancy using the sub-Kelvin ultrasonic measurements advances point defects controlling in silicon wafers and semiconductor devices.

ジャーナルMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
2-3 SPEC. ISS.
出版ステータスPublished - 2006 10月 15

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学


「Direct observation of vacancy in silicon using sub-Kelvin ultrasonic measurements」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。