Direct observation of thermal alteration of mixed film of Ge and SiO

C. Kaito, K. Kamitsuji, S. Tanaka, O. Kido, M. Kurumada, T. Sato, Y. Kimura, H. Suzuki, Y. Saito

研究成果: Article査読

1 被引用数 (Scopus)

抄録

The dynamic behavior of a film produced by coevaporation of Ge-SiO was observed in situ using a transmission electron microscope. The film produced had an amorphous structure containing Si, Ge and SiO2. A characteristic change of the film was observed above 500 °C. Upon heating at 750 °C, in addition to the growth of the SiGe mixed crystal with the diamond structure, the liquidlike mixed phase of SiGe-SiO2 was also produced. The growth process of the liquidlike phase was directly observed in situ. The growth process of Ge and GeSi nanocrystallites has been elucidated by cooling the mixed film to room temperature.

本文言語English
ページ(範囲)396-399
ページ数4
ジャーナルThin Solid Films
483
1-2
DOI
出版ステータスPublished - 2005 7 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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