Direct observation of pseudogap of SmB6 using ultrahigh-resolution photoemission spectroscopy

S. Souma, H. Kumigashira, T. Ito, T. Takahashi, S. Kunii

研究成果: Conference article査読

19 被引用数 (Scopus)

抄録

We have performed a temperature-dependent ultrahigh-resolution photoemission spectroscopy on SmB6 to study the "Kondo-insulator" nature. We found a sharp Sm 4f-derived peak about 18 meV away from EF and a pseudogap at EF at low temperature. The pseudogap is gradually filled-in by the transfer of spectral weight from the sharp peak at high temperatures. This indicates that the pseudogap is a Kondo-insulator gap originating in the hybridization between the Sm 4f states and the conduction electrons.

本文言語English
ページ(範囲)329-330
ページ数2
ジャーナルPhysica B: Condensed Matter
312-313
DOI
出版ステータスPublished - 2002 3
イベントInternational Conference on Strongly Correlated Electrons - Ann Arbor, MI, United States
継続期間: 2002 8 62002 8 6

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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