@article{73065e87c7af443f9719e372725b19bd,
title = "Direct observation of half-metallic energy gap in Co2MnSi by tunneling conductance spectroscopy",
abstract = "Magnetic tunnel junctions with a Co2MnSi/Al-O/CoFe structure are prepared by magnetron sputtering and investigated with respect to the energy gap near the Fermi energy level. The plasma oxidation time for the Al-O barrier is found to affect the condition of the Co2MnSi/Al-O interface. The optimized sample (50 s oxidation time) exhibits a magnetoresistance ratio of 159% and tunneling spin polarization of 0.89 at 2 K. The bias voltage dependence of tunneling conductance (dI/dV-V) reveals a clear half-metallic energy gap at 350-400 meV for Co2MnSi, with an energy separation of just 10 meV between the Fermi energy and the bottom edge of conduction band.",
author = "Y. Sakuraba and T. Miyakoshi and M. Oogane and Y. Ando and A. Sakuma and T. Miyazaki and H. Kubota",
note = "Funding Information: This study was supported by the IT Program of the Research Revolution 2002 (RR2002) under the title “Development of Universal Low-Power Spin Memory,” by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan, by the Core Research for Evolutional Science and Technology (CREST) program of the Japan Science and Technology (JST) Corporation, by the Grant Program of the New Energy and Industrial Development Organization (NEDO), and by a Research Fellowship for Young Scientists from the Japan Society for the Promotion of Science (JSPS).",
year = "2006",
doi = "10.1063/1.2335583",
language = "English",
volume = "89",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "5",
}