Direct observation of half-metallic energy gap in Co2MnSi by tunneling conductance spectroscopy

Y. Sakuraba, T. Miyakoshi, M. Oogane, Y. Ando, A. Sakuma, T. Miyazaki, H. Kubota

研究成果: Article査読

91 被引用数 (Scopus)

抄録

Magnetic tunnel junctions with a Co2MnSi/Al-O/CoFe structure are prepared by magnetron sputtering and investigated with respect to the energy gap near the Fermi energy level. The plasma oxidation time for the Al-O barrier is found to affect the condition of the Co2MnSi/Al-O interface. The optimized sample (50 s oxidation time) exhibits a magnetoresistance ratio of 159% and tunneling spin polarization of 0.89 at 2 K. The bias voltage dependence of tunneling conductance (dI/dV-V) reveals a clear half-metallic energy gap at 350-400 meV for Co2MnSi, with an energy separation of just 10 meV between the Fermi energy and the bottom edge of conduction band.

本文言語English
論文番号052508
ジャーナルApplied Physics Letters
89
5
DOI
出版ステータスPublished - 2006

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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