Direct observation of contact and channel resistance in pentacene four-terminal thin-film transistor patterned by laser ablation method

The channel formation of pentacene thin-film transistor (TFT) patterned by laser ablation method was studied. The analysis study was based on the direct observation of contact and channel resistance in the four-terminal TFT that was equipped with a gate electrode. The results revealed a change in the gate-voltage dependent contact resistance, with the gate-induced charge significantly reducing the contact resistance and increasing the source-drain resistance. The temperature dependence results indicated that the contact resistance was higher than the channel resistance and was dominated in the two-terminal total resistance of the device below 120 K.