Direct observation of carrier depletion around a dislocation in GaP by scanning spreading resistance microscopy

T. Yokoyama, R. Takenaka, Y. Kamimura, K. Edagawa, I. Yonenaga

研究成果: Article査読

5 被引用数 (Scopus)

抄録

The local electrical resistivities in deformed n-GaP have been measured by scanning spreading resistance microscopy (SSRM). The SSRM images show chainlike alignments of spots with high resistivity along the slip direction. These spots can be attributed to carrier-depletion around a charged dislocation. From the observed spot size, the line charge density of the dislocations has been estimated to be 0.4-0.9e/b, where b denotes the magnitude of the Burgers vector. The estimated value of line charge density has been discussed in relation with the dislocation core structure.

本文言語English
論文番号202108
ジャーナルApplied Physics Letters
95
20
DOI
出版ステータスPublished - 2009
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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