Direct Measurements of Trap Density in a SiGe/Si Hetero-Interface and Correlation between the Trap Density and Low-Frequency Noise in SiGe-Channel pMOSFETs

Toshiaki Tsuchiya, Yuji Imada, Junichi Murota

研究成果: Article査読

11 被引用数 (Scopus)

抄録

The interface trap density in a SiGe/Si heterostructure has been successfully measured for the first time using a low-temperature charge pumping technique in a SiGe-channel pMOSFET, avoiding interference from the interface traps between the gate oxide and the semiconductor surface. Moreover, low-frequency noise in the SiGe pMOSFETs has been measured to investigate any correlation with the trap density observed at the SiGe/Si hetero-interface. A good correlation was obtained between the measured interface trap density in the heterostructure and the low-frequency noise level in the current flowing in the SiGe-channel.

本文言語English
ページ(範囲)2507-2512
ページ数6
ジャーナルIEEE Transactions on Electron Devices
50
12
DOI
出版ステータスPublished - 2003 12

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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