Direct measurement of titanium pipe diffusion coefficients in sapphire

T. Nakagawa, I. Sakaguchi, N. Shibata, K. Matsunaga, T. Mizoguchi, T. Yamamoto, H. Haneda, Y. Ikuhara

研究成果: Conference contribution

抄録

The diffusion behavior of Ti3+ along basal dislocations in sapphire has been investigated by SIMS technique. High-density unidirectional dislocations were introduced by the high-temperature mechanical deformation, and Ti3+ ions were subsequently diffused along the dislocations. The SIMS diffusion profiles clearly showed diffusion tail due to the short circuit diffusion along the dislocations called pipe diffusion. Lattice diffusion coefficient and pipe diffusion coefficient of Ti3+ at 1300°C were measured to be 1.0±0.2×10-19 [m2/sec] and 2.0±0.6× 10-13 [m2/sec], respectively.

本文言語English
ホスト出版物のタイトルRecrystallization and Grain Growth III - Proceedings of the Third International Conference on Recrystallization and Grain Growth, ReX and GG III
出版社Trans Tech Publications Ltd
ページ939-942
ページ数4
PART 2
ISBN(印刷版)087849443X, 9780878494439
DOI
出版ステータスPublished - 2007 1 1
外部発表はい
イベント3rd International Conference on Recrystallization and Grain Growth, ReX GG III - Jeju Island, Korea, Republic of
継続期間: 2007 6 102007 6 15

出版物シリーズ

名前Materials Science Forum
番号PART 2
558-559
ISSN(印刷版)0255-5476
ISSN(電子版)1662-9752

Other

Other3rd International Conference on Recrystallization and Grain Growth, ReX GG III
CountryKorea, Republic of
CityJeju Island
Period07/6/1007/6/15

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

フィンガープリント 「Direct measurement of titanium pipe diffusion coefficients in sapphire」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル