Direct imaging of thermodynamic process in atom migration by using scanning tunneling microscopy

Yuji Suwa, Taro Hitosugi, Shinobu Matsuura, Seiji Heike, Satoshi Watanabe, Toshiyuki Onogi, Tomihiro Hashizume

    研究成果: Article査読

    3 被引用数 (Scopus)

    抄録

    We report novel imaging of surface adatom migration that allowed us to probe the impurity atoms buried in a semiconductor, by scanning tunneling microscopy (STM). We adsorbed Ga atoms onto a chemically inactive H-terminated Si(100) surface, and directly observed thermal Ga-atomic motion near 100 K. By exploiting the fact that the STM image reveals the thermodynamic distribution function of atomic trajectories, we achieved high-sensitivity detection of a positional variation in the surface potential. The position of subsurface P dopants was thereby obtained, in combination with first principles calculations of electronic states.

    本文言語English
    ページ(範囲)3085-3091
    ページ数7
    ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    41
    5 A
    DOI
    出版ステータスPublished - 2002 5

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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