Ga droplets were formed in line on a sulfur-terminated GaAs surface using a low-energy focused ion beam. Ga ions, picked from a liquid Ga ion source, were accelerated up to 10 kV to produce a focused ion beam. Subsequently, the ions were given a positive bias to reduce their kinetic energy by retarding lenses. The Ga ions softly landed on the surface and formed a series of Ga droplets. This method was found to be useful in making fine structures directly on semiconductor materials.
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