Direct Ga deposition by low-energy focused ion-beam system

T. Chikyow, N. Koguchi, A. Shikanai

研究成果: Article査読

10 被引用数 (Scopus)

抄録

Ga droplets were formed in line on a sulfur-terminated GaAs surface using a low-energy focused ion beam. Ga ions, picked from a liquid Ga ion source, were accelerated up to 10 kV to produce a focused ion beam. Subsequently, the ions were given a positive bias to reduce their kinetic energy by retarding lenses. The Ga ions softly landed on the surface and formed a series of Ga droplets. This method was found to be useful in making fine structures directly on semiconductor materials.

本文言語English
ページ(範囲)254-258
ページ数5
ジャーナルSurface Science
386
1-3
DOI
出版ステータスPublished - 1997 10月 1
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 材料化学

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