We propose a method for fabricating high-performance epitaxial graphene field-effect transistors (EG-FETs), involving a microwave-annealing-treated solution-based Al2O3 (MWA-treated sol-Al2O3) layer as a gate dielectric. The MWA process substantially preserves the pristine properties of EG with minimal hole doping and strain induction. The MWA-treated sol-Al2O3 showed a surface roughness of ~0.33 nm, a dielectric constant of 7.5, and a leakage current of 8.7 × 10−6 A/cm2. The transconductance of the MWA-based EG-FET presents an enhanced field effect mobility by a factor of about 8 compared with the EG-FET with a natural oxide of Al.
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