Direct bonding of SiC by the suface activated bonding method

Tadatomo Suga, Fengwen Mu, Masahisa Fujino, Yoshikazu Takahashi, Haruo Nakazawa, Kenichi Iguchi

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

3-inch 4H-SiC wafer direct bonding has been achieved by the modified surface activated bonding (SAB) method without any chemical-clean treatment and high temperature annealing. Strong bonding of the SiC wafers, greater than 32MPa (tensile strength), was demonstrated at room temperature under 5kN force for 300 seconds. Almost the entire wafer has been bonded very well except the small outermost region and few voids. Moreover, the interface structure was analyzed to explore the bonding mechanism. An amorphous layer was found to be as the intermediate layer at the interface.

本文言語English
ホスト出版物のタイトル2014 International Conference on Electronics Packaging, ICEP 2014
出版社IEEE Computer Society
ページ341-344
ページ数4
ISBN(印刷版)9784904090107
DOI
出版ステータスPublished - 2014 1 1
外部発表はい
イベント2014 International Conference on Electronics Packaging, ICEP 2014 - Toyama, Japan
継続期間: 2014 4 232014 4 25

出版物シリーズ

名前2014 International Conference on Electronics Packaging, ICEP 2014

Conference

Conference2014 International Conference on Electronics Packaging, ICEP 2014
国/地域Japan
CityToyama
Period14/4/2314/4/25

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料

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