Dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) thin-film transistors with improved performance and stability

Ute Zschieschang, Frederik Ante, Daniel Kälblein, Tatsuya Yamamoto, Kazuo Takimiya, Hirokazu Kuwabara, Masaaki Ikeda, Tsuyoshi Sekitani, Takao Someya, Jan Blochwitz Nimoth, Hagen Klauk

研究成果: Article査読

133 被引用数 (Scopus)

抄録

Organic thin-film transistors based on the vacuum-deposited small-molecule conjugated semiconductor dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b] thiophene (DNTT) have been fabricated and characterized. The transistors have field-effect mobilities as large as 2 cm2/V s and an on/off ratio of 108. Owing to the large ionization potential of DNTT, the TFTs show excellent stability for periods of several months of storage in ambient air. Unipolar ring oscillators based on DNTT TFTs with a channel length of 10 μm oscillate with a signal propagation delay as short as 7 μsec per stage at a supply voltage of 5 V. We also show that DNTT TFTs with usefully small channel width/length ratio are able to drive blue organic LEDs to a brightness well above that required for active-matrix displays.

本文言語English
ページ(範囲)1370-1375
ページ数6
ジャーナルOrganic Electronics
12
8
DOI
出版ステータスPublished - 2011 8月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 生体材料
  • 化学 (全般)
  • 凝縮系物理学
  • 材料化学
  • 電子工学および電気工学

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