Digital etching of (001) InP substrate by intermittent injection of tertiarybutylphosphine in ultrahigh vacuum

Nobuyuki Otsuka, Yutaka Oyama, Hideyuki Kikuchi, Jun Ichi Nishizawa, Ken Suto

研究成果: Article査読

9 被引用数 (Scopus)

抄録

The intermittent injection of tertiarybutylphosphine (TBP), the injection and the evacuation of which are cyclically repeated, has been used for the selective-area etching of an InP (001) surface to study the surface adsorption/desorption mechanism in ultrahigh vacuum. Digital etching is achieved, as described by a modified Langmuir-type equation. It is assumed that TBP adheres to the surface within 0.1 s even at an injection pressure of 3 × 10-5 Torr and prevents phosphorus dissociation during evacuation times longer than 5 s. The activation energy of 18 kcal/mol (at 340-390°C) is lower than that using tris-dimethylaminophosphorus. A specular surface is obtained on a sulfur-doped substrate.

本文言語English
ページ(範囲)L1509-L1512
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
37
12 SUPPL. B
DOI
出版ステータスPublished - 1998 12 15

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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