The intermittent injection of tertiarybutylphosphine (TBP), the injection and the evacuation of which are cyclically repeated, has been used for the selective-area etching of an InP (001) surface to study the surface adsorption/desorption mechanism in ultrahigh vacuum. Digital etching is achieved, as described by a modified Langmuir-type equation. It is assumed that TBP adheres to the surface within 0.1 s even at an injection pressure of 3 × 10-5 Torr and prevents phosphorus dissociation during evacuation times longer than 5 s. The activation energy of 18 kcal/mol (at 340-390°C) is lower than that using tris-dimethylaminophosphorus. A specular surface is obtained on a sulfur-doped substrate.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|号||12 SUPPL. B|
|出版ステータス||Published - 1998 12 15|
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