It is found that interstitial agglomerates are formed uniformly in an irradiated area of InP by annealing at the temperature above 700 K after 200 keV-electron irradiation. TEM observation shows that the number density of interstitial atoms in the agglomerates reached a maximum value when the growth of all the agglomerates stopped. The final density did not depend on annealing temperature but on electron dose, and it increased quadratically with electron dose up to 2×1022 cm-2. In order to explain the experimental results, we have proposed a new model that the agglomerates are formed by thermal diffusion and agglomeration of interstitial-pairs, i.e. In-Pi interstitial-pairs. From the analysis, the migration energies for the pairs are estimated to be 1.52 eV. The onset temperature for the diffusion of the pairs is estimated as 550 K.
|ジャーナル||Materials Research Society Symposium - Proceedings|
|出版ステータス||Published - 1997|
|イベント||Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA|
継続期間: 1996 12 2 → 1996 12 6
ASJC Scopus subject areas