TY - JOUR
T1 - Diffusion process of interstitial atoms in an electron irradiated InP studied by transmission electron microscopy
AU - Ohno, Yutaka
AU - Saitoh, Nagahito
AU - Takeda, Seiji
AU - Hirata, Mitsuji
PY - 1997/9
Y1 - 1997/9
N2 - Growth of interstitial agglomerates, that are formed in InP by post-annealing above 700 K following 200 keV electron irradiation, has been systematically examined by transmission electron microscopy to understand the migration of point defects in InP. The nucleation and growth of the agglomerates stopped at an early stage of post-annealing. The number density of interstitial atoms in agglomerates, estimated after the growth of all agglomerates stops, did not depend on annealing temperature but on electron dose, and it increased quadratically with electron dose up to 2.5 × 1022 cm-2. These results were well explained by a model in which the agglomerates were formed through the migration of Ini-Pi interstitial-pairs. The migration energy for the pairs was estimated as 1.52 eV.
AB - Growth of interstitial agglomerates, that are formed in InP by post-annealing above 700 K following 200 keV electron irradiation, has been systematically examined by transmission electron microscopy to understand the migration of point defects in InP. The nucleation and growth of the agglomerates stopped at an early stage of post-annealing. The number density of interstitial atoms in agglomerates, estimated after the growth of all agglomerates stops, did not depend on annealing temperature but on electron dose, and it increased quadratically with electron dose up to 2.5 × 1022 cm-2. These results were well explained by a model in which the agglomerates were formed through the migration of Ini-Pi interstitial-pairs. The migration energy for the pairs was estimated as 1.52 eV.
KW - Annealing
KW - Diffusion
KW - Electron irradiation
KW - InP
KW - Interstitial atoms
KW - Transmission electron microscopy
UR - http://www.scopus.com/inward/record.url?scp=0031222013&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031222013&partnerID=8YFLogxK
U2 - 10.1143/jjap.36.5628
DO - 10.1143/jjap.36.5628
M3 - Article
AN - SCOPUS:0031222013
SN - 0021-4922
VL - 36
SP - 5628
EP - 5632
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 9 A
ER -