Diffusion behaviors observed on the surface of CoFeB film after the natural oxidation and the annealing

S. Sato, H. Honjo, S. Ikeda, H. Ohno, T. Endoh, M. Niwa

研究成果: Conference contribution

抄録

A magnetic tunnel junction (MTJ) with a CoFeB/MgO structure demonstrated a high tunnel magnetoresistance (TMR) ratio with a perpendicular magnetic easy axis1, and has been investigated toward an integration in VLSI2 to replace a conventional volatile cache memory with a magnetic random access memory3. A MgO tunnel barrier has been formed on a CoFeB film by a magnetron sputtering of MgO target4 or by a natural oxidation of Mg film5 to form a CoFeB/MgO stack. In both cases, the surface of the CoFeB film underneath has been found to be oxidized during MgO deposition process4,5 and to affect an interface perpendicular magnetic anisotropy5. A reduction of the oxidized Fe at the MgO/CoFeB interface was necessary to achieve a high TMR ratio6. In this experiment, a reduction reaction of oxidized Fe/Co by B on the naturally oxidized surface of the CoFeB film after an annealing has been investigated using X-ray photoelectron spectroscopy (XPS)7. In this work, we focused on the diffusion behaviors of the constituent elements at the CoFeB film surface after the natural oxidation and the annealing process to elucidate the oxidation and reduction mechanisms of the CoFeB film.

本文言語English
ホスト出版物のタイトル2015 IEEE International Magnetics Conference, INTERMAG 2015
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781479973224
DOI
出版ステータスPublished - 2015 7 14
イベント2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, China
継続期間: 2015 5 112015 5 15

出版物シリーズ

名前2015 IEEE International Magnetics Conference, INTERMAG 2015

Other

Other2015 IEEE International Magnetics Conference, INTERMAG 2015
国/地域China
CityBeijing
Period15/5/1115/5/15

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学
  • 表面、皮膜および薄膜

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