Diffusion and solubility of zinc in dislocation-free and plastically deformed silicon crystals

D. Grünebaum, Th Czekalla, N. A. Stolwijk, H. Mehrer, Ichiro Yonenaga, K. Sumino

研究成果: Article査読

36 被引用数 (Scopus)

抄録

Floating-zone Si crystals enclosed in quartz ampoules were exposed to Zn vapour released by an elemental diffusion source. Penetration profiles of Zn in Si were recorded using the spreading-resistance technique or neutron activation analysis. Both the erfc-type distributions observed in plastically deformed specimens and the non-erfc profiles determined on dislocationfree wafers are consistently interpreted within the framework of the kick-out model. As an implication, Si self-interstitials generated in excess by interstitial-to-substitutional transitions of in-diffusing Zn atoms annihilate not only at the surface but also at dislocations. On the other hand, dislocation-induced segregation of Zn appears to be rather minor, as revealed by transition electron microscopy. Combining the Zn incorporation rate in dislocation-free Si with solubility data from saturated specimens yields the self-interstitial contribution to the Si self-diffusion coefficient.

本文言語English
ページ(範囲)65-74
ページ数10
ジャーナルApplied Physics A Solids and Surfaces
53
1
DOI
出版ステータスPublished - 1991 7 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Materials Science(all)
  • Engineering(all)

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