Diffraction of γ-rays with energies of 1.17 and 1.33MeV by a flat Si crystal

Shunya Matsuba, Takehito Hayakawa, Toshiyuki Shizuma, Nobuyuki Nishimori, Ryoji Nagai, Masaru Sawamura, Christopher T. Angell, Mamoru Fujiwara, Ryoichi Hajima

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Diffraction of γ-rays by a flat Si crystal has been demonstrated using a high flux 60Co source with an intensity of 2.3 TBq. The diffraction intensities of the γ-rays with energies of 1.17 and 1.33 MeV have been measured as a function of the rotation angle of the crystal. Three peaks corresponding to the Si(440) and Si(220) diffractions for 1.17MeV and the Si(440) diffraction for 1.33MeV have been measured. The heights and shapes of these three peaks are well reproduced by taking into account Bragg's law and the experimental geometry.

本文言語English
論文番号052203
ジャーナルJapanese journal of applied physics
54
5
DOI
出版ステータスPublished - 2015
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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