Different properties of erbium silicides on Si(100) and Si(551) orientation surfaces

Hiroaki Tanaka, Akinobu Teramoto, Rihito Kuroda, Yukihisa Nakao, Tomoyuki Suwa, Kazumasa Kawase, Shigetoshi Sugawa, Tadahiro Ohmi

研究成果: Conference contribution

6 被引用数 (Scopus)

抄録

The electrical and physical properties of ErSi x on ç-type Si(IOO) and Si(551) surfaces are reported. The Schottky barrier heights (SBHs) depend on the Si substrate orientation. On a Si(100) surface, a low electron SBH around 0.3 eV is obtained and the obtained SBH is larger than 0.4 eV on a Si(551) surface, while this difference is caused by the quantity of Si atoms in ErSi x and on Si(100) this is less than on Si(551). These silicidation reactions are very important to develop the future high current drivability devices using any surface orientation.

本文言語English
ホスト出版物のタイトルULSI Process Integration 7
ページ365-373
ページ数9
7
DOI
出版ステータスPublished - 2011
イベント7th Symposium on ULSI Process Integration - 220th ECS Meeting - Boston, MA, United States
継続期間: 2011 10 92011 10 14

出版物シリーズ

名前ECS Transactions
番号7
41
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other7th Symposium on ULSI Process Integration - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period11/10/911/10/14

ASJC Scopus subject areas

  • Engineering(all)

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