Dielectric-tuned diamondlike carbon materials for high-performance self-aligned graphene-channel field effect transistors

研究成果: Conference contribution

抄録

The 'DLC-GFET', a graphene field effect transistor with a diamondlike carbon (DLC) top-gate dielectric film, is presented. The DLC film was formed 'directly' onto the graphene channel without forming passivation interlayers using our original photoemission-assisted plasma-enhanced chemical vapor deposition (PA-CVD), where the plasma was precisely controlled by photoemission from the sample with quite low electric power to minimize plasma damage to the channel. The DLC-GFET exhibits clear ambipolar characteristics with a slightly positive shift of the neutral points (Dirac voltages). Relatively high transconductances were obtained as 14.6 (8.8) mS/mm in the n (p) channel modes, respectively, with a thick gate dielectric of 48 nm and a long gate length of 5 μm, promising vertical scaling-down to improve the high-frequency performance. The positive shift of the Dirac voltage is due to unintentional hole doping from oxygen species in the DLC film into the graphene channel, promising a minute modulation doped structure with oxygen to overcome high resistance in the access region. Hence, a DLC film deposited by PA-CVD is a candidate for the gate dielectric on graphene.

本文言語English
ホスト出版物のタイトルNanocarbon Materials and Devices
ページ185-190
ページ数6
DOI
出版ステータスPublished - 2013 1 1
イベント2012 MRS Spring Meeting - San Francisco, CA, United States
継続期間: 2012 4 92012 4 13

出版物シリーズ

名前Materials Research Society Symposium Proceedings
1451
ISSN(印刷版)0272-9172

Other

Other2012 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period12/4/912/4/13

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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