Dielectric properties of BaTi2O5 thick films prepared on Pt-coated MgO(110) single-crystal substrate by laser chemical vapor deposition

Dongyun Guo, Yang Ju, Akihiko Ito, Takashi Goto, Chuanbin Wang, Qiang Shen, Rong Tu, Zhixiong Huang, Lianmeng Zhang

研究成果: Article査読

4 被引用数 (Scopus)

抄録

BaTi2O5 (BT2) films were deposited on Pt-coated MgO(110) single-crystal substrates by laser chemical vapor deposition. The single-phase BT2 thick films were deposited at high deposition rates. The BT2 thick films consisted of elongated grains with columnar cross-section. With increasing the deposition temperature (Tdep), the orientation of BT2 thick films changed from (112) to (511), and the grain size increased. The (112)-oriented BT2 thick film deposited at Tdep=956 K had dielectric constant (ϵ′) of 67 and dielectric loss (tanδ) of 0.015, while the (511)-oriented BT2 thick film deposited at Tdep=964 K had ϵ′ of 74 and tanδ of 0.019 at 300 K and 1 MHz.

本文言語English
ページ(範囲)11464-11467
ページ数4
ジャーナルCeramics International
42
9
DOI
出版ステータスPublished - 2016 7月 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • セラミックおよび複合材料
  • プロセス化学およびプロセス工学
  • 表面、皮膜および薄膜
  • 材料化学

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