BaTiO3 films were deposited by MOCVD at temperature of 973 K and total pressure of 0.2 to 0.8 kPa on Pt - coated fused silica and (100)MgO substrates. Ba(DPM)2 and Ti(O-i-C3H7)2(DPM)2 were used as Ba and Ti sources, respectively. BaTiO3 films in single phase were obtained when the films were deposited at 973 K and Ba/Ti ratio of 0.25 to 0.35. The grain size of BaTiO3 films increased with decreasing total pressure. BaTiO3 polycrystalline films with thickness of 1 μm had dielectric constant of 480, loss tangent of 0.03 and electrical resistivity of 2.1 MΩm at room temperature.
|出版ステータス||Published - 2000 12月 1|
|イベント||12th IEEE International Symposium on Applications of Ferroelectrics - Honolulu, HI, United States|
継続期間: 2000 7月 21 → 2000 8月 2
|Other||12th IEEE International Symposium on Applications of Ferroelectrics|
|Period||00/7/21 → 00/8/2|
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