Dielectric properties of Ba-Ti-O thin films prepared by MOCVD

Hiroshi Masumoto, T. Tohma, Takashi Goto, T. Smirnova, Y. Masuda, T. Hirai

研究成果: Paper査読

抄録

BaTiO3 films were deposited by MOCVD at temperature of 973 K and total pressure of 0.2 to 0.8 kPa on Pt - coated fused silica and (100)MgO substrates. Ba(DPM)2 and Ti(O-i-C3H7)2(DPM)2 were used as Ba and Ti sources, respectively. BaTiO3 films in single phase were obtained when the films were deposited at 973 K and Ba/Ti ratio of 0.25 to 0.35. The grain size of BaTiO3 films increased with decreasing total pressure. BaTiO3 polycrystalline films with thickness of 1 μm had dielectric constant of 480, loss tangent of 0.03 and electrical resistivity of 2.1 MΩm at room temperature.

本文言語English
ページ841-844
ページ数4
出版ステータスPublished - 2000 12 1
イベント12th IEEE International Symposium on Applications of Ferroelectrics - Honolulu, HI, United States
継続期間: 2000 7 212000 8 2

Other

Other12th IEEE International Symposium on Applications of Ferroelectrics
国/地域United States
CityHonolulu, HI
Period00/7/2100/8/2

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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