Dielectric properties of Ba 4Ti 13O 30 film prepared by laser chemical vapor deposition

Dongyun Guo, Akihiko Ito, Takashi Goto, Rong Tu, Chuanbin Wang, Qiang Shen, Lianmeng Zhang

研究成果: Article査読

11 被引用数 (Scopus)

抄録

The effect of frequency and temperature on dielectric properties of Ba 4Ti 13O 30 film was investigated by preparing the film on Pt/Ti/SiO 2/Si substrate by laser chemical vapor deposition (LCVD). The substrate was heated on a hot stage at a pre-heating temperature of 773 K. The crystal structure was analyzed by X-ray diffraction using CuKα X-ray radiation. The grains were regularly arranged along the perpendicular direction to the substrate and the microstructure of columnar grains near the substrate interface consisted of fine grains which grew into larger columnar grains. At low frequency, all kinds of polarization can keep up with reversal of external electric field. The film showed the similar dielectric properties with that of BaTi 4O 9 ceramic, which indicate that the film might be used to microwave devices.

本文言語English
ページ(範囲)1559-1561
ページ数3
ジャーナルJournal of Materials Science
47
3
DOI
出版ステータスPublished - 2012 2

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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