Dielectric constant of ultrathin SiO2 film estimated from the Auger parameter

K. Hirose, H. Kitahara, T. Hattori

    研究成果: Article査読

    37 被引用数 (Scopus)

    抄録

    The dielectric constant ε of ultrathin (0.55-7.96 nm) SiO2 films formed on a Si(001) substrate was characterized in terms of the modified Auger parameter of Si atoms, α′Si. The α′Si was found to be as much as 0.7 eV higher for an ultrathin (0.68 nm) SiO2 film than for thick SiO2 films. From the observed oxide thickness dependence of α′Si, the ε of ultrathin SiO2 films was estimated by calculating the change in the polarization energy and the change in the electrostatic screening energy originating from dielectric discontinuity at the SiO2/Si interface. The ε of ultrathin (0.68-2.13 nm) SiO2 films was identical to that of bulk SiO2 within ±1%.

    本文言語English
    論文番号195313
    ページ(範囲)1953131-1953135
    ページ数5
    ジャーナルPhysical Review B - Condensed Matter and Materials Physics
    67
    19
    出版ステータスPublished - 2003 5

    ASJC Scopus subject areas

    • 凝縮系物理学

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