Development of skewed DRIE process and its application to electrostatic tilt mirror

M. Nakada, K. Takahashi, T. Takahashi, A. Higo, H. Fujita, H. Toshiyoshi

    研究成果: Conference article査読

    5 被引用数 (Scopus)

    抄録

    We present a newly developed skewed-DRIE (deep reactive ion etch) process through a silicon wafer. Maximum skew angle of 25 degrees with respect to the wafer surface was obtained with a 360 micron thick silicon substrate. This technique was used to build the slanted counter electrode of 60 degrees for an electrostatic torsion mirror. Pull-in voltage was 100 volts, which was lower than that of a vertically etched counter electrode.

    本文言語English
    論文番号4805576
    ページ(範囲)1087-1090
    ページ数4
    ジャーナルProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
    DOI
    出版ステータスPublished - 2009 6月 1
    イベント22nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2009 - Sorrento, Italy
    継続期間: 2009 1月 252009 1月 29

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 凝縮系物理学
    • 機械工学
    • 電子工学および電気工学

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