Development of silicon wafer packaging technology for deep uv led

Hirofumi Chiba, Yukio Suzuki, Yoshiaki Yasuda, Mitsuyasu Kumagai, Takaaki Koyama, Shuji Tanaka

研究成果: Article査読

抄録

This paper reports a deep-UV LED package based on silicon MEMS process technology. The package (Si-PKG) consists of a cavity formed by silicon crystalline anisotropic etching, through-silicon vias (TSV) filled with electroplated Cu, bonding metals made of electroplated Ni/AuSn and a quartz lid for hermetic sealing. A deep-UV LED chip is directly mounted in the Si-PKG by AuSn eutectic bonding. It has advantages in terms of heat dissipation, light utilization efficiency, productivity and cost over conventional AlN ceramic packages. We confirmed a light output of 30 mW and effective reflection on Si (111) cavity slopes in the Si-PKG. Further improvement of the optical output is expected.

本文言語English
ページ(範囲)152-157
ページ数6
ジャーナルIEEJ Transactions on Sensors and Micromachines
140
7
DOI
出版ステータスPublished - 2020

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering

フィンガープリント 「Development of silicon wafer packaging technology for deep uv led」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル