TY - JOUR
T1 - Development of microwave-excited plasma-enhanced metal-organic chemical vapor deposition system for forming ferroelectric Sr2(Ta 1-x,Nbx)2O7 thin film on amorphous SiO2
AU - Takahashi, Ichirou
AU - Funaiwa, Kiyoshi
AU - Azumi, Keita
AU - Yamashita, Satoru
AU - Shirai, Yasuyuki
AU - Hirayama, Masaki
AU - Teramoto, Akinobu
AU - Sugawa, Shigetoshi
AU - Ohmi, Tadahiro
PY - 2007/4/24
Y1 - 2007/4/24
N2 - Sr2(Ta1-x,Nbx)2O2 (STN; x = 0.3) is suitable for use as ferroelectric gate field-effect transistors (FETs) for one-transistor-type ferroelectric memory devices, because it has a low dielectric constant. For applications using metal-ferroelectric- insulator-semiconductor (MFIS) FETs, crystallization of ferroelectric film on insulator is necessary. Perovskite STN can be successfully obtained on amorphous SiO2 by ferroelectric-multilayer-stack (FMLS) deposition, which uses alternating steps of STN sputtering deposition and oxygen radical treatment. In this study, we report on a newly developed microwave-excited plasma-enhanced metal-organic chemical vapor deposition (MPCVD) system, in which STN can be deposited in radical oxygen atmosphere. We succeeded in the fabrication of STN on amorphous SiO2 in a single process. The IrO2/STN (200nm)/SiO2 (10nm)/p-type Si device shows capacitance-voltage (C-V) hysteresis curves and a memory window of 1.2V with a 5 V writing operation.
AB - Sr2(Ta1-x,Nbx)2O2 (STN; x = 0.3) is suitable for use as ferroelectric gate field-effect transistors (FETs) for one-transistor-type ferroelectric memory devices, because it has a low dielectric constant. For applications using metal-ferroelectric- insulator-semiconductor (MFIS) FETs, crystallization of ferroelectric film on insulator is necessary. Perovskite STN can be successfully obtained on amorphous SiO2 by ferroelectric-multilayer-stack (FMLS) deposition, which uses alternating steps of STN sputtering deposition and oxygen radical treatment. In this study, we report on a newly developed microwave-excited plasma-enhanced metal-organic chemical vapor deposition (MPCVD) system, in which STN can be deposited in radical oxygen atmosphere. We succeeded in the fabrication of STN on amorphous SiO2 in a single process. The IrO2/STN (200nm)/SiO2 (10nm)/p-type Si device shows capacitance-voltage (C-V) hysteresis curves and a memory window of 1.2V with a 5 V writing operation.
KW - Development of MOCVD system
KW - Ferroelectric crystallization on amorphous insulator
KW - Microwave-excited plasma MOCVD
KW - Radical oxygen
KW - Sr(Ta,Nb)o (STN)
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U2 - 10.1143/JJAP.46.2200
DO - 10.1143/JJAP.46.2200
M3 - Article
AN - SCOPUS:34547895549
VL - 46
SP - 2200
EP - 2204
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 B
ER -