Sr2(Ta1-x,Nbx)2O2 (STN; x = 0.3) is suitable for use as ferroelectric gate field-effect transistors (FETs) for one-transistor-type ferroelectric memory devices, because it has a low dielectric constant. For applications using metal-ferroelectric- insulator-semiconductor (MFIS) FETs, crystallization of ferroelectric film on insulator is necessary. Perovskite STN can be successfully obtained on amorphous SiO2 by ferroelectric-multilayer-stack (FMLS) deposition, which uses alternating steps of STN sputtering deposition and oxygen radical treatment. In this study, we report on a newly developed microwave-excited plasma-enhanced metal-organic chemical vapor deposition (MPCVD) system, in which STN can be deposited in radical oxygen atmosphere. We succeeded in the fabrication of STN on amorphous SiO2 in a single process. The IrO2/STN (200nm)/SiO2 (10nm)/p-type Si device shows capacitance-voltage (C-V) hysteresis curves and a memory window of 1.2V with a 5 V writing operation.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 2007 4月 24|
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